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Which mosfet description (pictures provided) is more accurate?

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I was reading my physics book and found a description of mosfets that was different than the one I’m used to.
Here is the picture from the physics book:
enter image description here

In summary the physics book describes it’s operation as this:

  • Gate = OFF = No potential difference applied to gate. This allows electrons to drift through the n channel (which is already there at the beginning). Current is maintained because of applied potential difference between source and drain.
  • Gate = ON = Potential difference is applied to the gate, in such away that repels the electrons in the n channel into the p substrate. This reverse bias causes the depletion zone between the p-n junction to increase, causing the n-channel to decrease, and the current to stop due to a low amount of charge carriers.

mosfet that I’m used to (taken from a digital design book)

enter image description here

  • Gate = OFF = No current due to no conduction path.
  • Gate = ON = Electrons attracted to the gate, forming a n channel path for electrons to drift through, so current flows.

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