How does id versus Vds characteristic curve will change if Gate and Drain are shorted?

I was trying to solve this problem 5.19 From Sedra & Smith for microelectronic circuits 6th edition

For the below circuit, Find an expression for Vds in term of id, Sketch the graph for Vds versus id.

I thought since here Vds = Vgs, and MOSFET is in saturation always when Drain and Gate are connected, then the curve would be like id-Vgs characteristic curve.

But In a similar problem from Sedra & Smith for microelectronic circuits 5th edition, p4.10, the solution states that the curve will not depends on Vt, so he started form 0 not from the point where Vgs is greater than vt.

I don’t know which answer is correct, my assumption or the manual answer? and why would id not depends on Vt?